High-Throughput Additive Manufacturing …
Organizer
-
Reliability Chapter
Location
- Research Institute (KRI)
More Info
Boston Reliability and SMTA and iMAPS
High-Throughput Additive Manufacturing of Microelectronics for 3D Heterogenous Integration and Advanced Packaging
Location: Kostas Research Institute (KRI), Northeastern University Innovation Campus, 141 South Bedford Street, Burlington, MA 01803
Speaker: Prof Ahmed A. Busnaina
Advance registration is required for us to plan.
5:00PM doors open and informal networking begins, 5:30PM pizza, salad, and beverages arrive, 6:00PM presentation, 7:00PM tour, finishing at about 7:30PM
A new high-throughput additive manufacturing of nano and microelectronics utilizes direct assembly of nanoscale particles onto interposers, wafers, or boards. The technology enables the printing of inorganic conductors, semiconductors and dielectrics. It has been demonstrated for printing passive and active components including logic gates at the nano and microscale. Transistors with an on/off ratio greater than 106 have been demonstrated. This technology enables the fabrication of nanoelectronics and electronic components while reducing the cost by 10 to 100 times compared to conventional fabrication and can print 1000 times faster than ink-jet-based printing. Results show high-throughput printing of interconnects and circuit components at a scale equal to or less than 2 microns. Fully additively manufactured capacitors printed on silicon, sapphire, and polymer substrates will be presented. The results will show printed capacitors ranging down to 20 x 20 µm with capacitance of femto farads to nano farads. The results will also show additively printed MOSFET and logic gates such as NAND with high on/off ratios. A fully automated printing platform (a Fab-in-a-Box) was designed and built for printing microelectronics with minimum-sized features down to 300 nm for several advanced packaging applications and will be presented.
Speaker Bio:

Ahmed A. Busnaina, Ph.D., is the founding Director of the National Science Foundation’s Nanoscale Science and Engineering Center for High-rate Nanomanufacturing since 2004 and the NSF Center for Microcontamination Control at Northeastern University, Boston, MA, since 2002. He is also the founder and CTO of Nano OPS, Inc. since 2017. Prior to joining Northeastern University, he was a professor and a director of the Particulate Control Lab at Clarkson University from 1984-2000. Dr. Busnaina is internationally recognized for his work on semiconductor fabrication with an emphasis on yield. He also developed nano and microscale additive manufacturing for making interconnects, passive and active electronic components, LEDs, and sensors. He authored more than 600 papers in journals, proceedings, and conferences. He has 25 granted and more than 45 pending patents. He was awarded the 2020 American Society of Mechanical Engineers (ASME) William T. Ennor Manufacturing Technology Award and Medal. He is a fellow of the National Academy of Inventors, a fellow of the American Society of Mechanical Engineers, and a Fulbright Senior Scholar. He is an editor of the Journal of Microelectronic Engineering. He also serves on many advisory boards, including Samsung Electronics, the Journal of Electronic Materials Letters, the Journal of Nanomaterials, and the Journal of Nanomanufacturing.
Directions: Kostas Research Institute (KRI), Northeastern University Innovation Campus, 141 South Bedford Street, Burlington, MA 01803







